Supply of Plasma Etcher and Deposition Tools
Original notice title
Ireland – Laboratory, optical and precision equipments (excl. glasses) – LA3215C-UCC-CFT for the Supply of a Suite of Plasma Etcher and Plasma Deposition Tools, 4 Lots
Opportunity Score
Why this score?
Opportunity
65 / 100
Complexity
70 / 100
Risk factors
No award criteria, selection criteria, or required documents list provided. Bidders must rely on procurement documents...
Lot estimated values are each listed as €3,300,000 but overall estimated value is also €3,300,000, suggesting possible...
Submission deadline in 0 days
Deep Portfolio Analysis
Uses:
- Description
- Industries & Services
- Capabilities
- Market & Experience
- Certifications
Overview
Moderate opportunityKey Facts
- EUR 3.3M estimated value
- Supplies contract
- 3 lots
- Duration 48 MONTH
- Supply, delivery, installation, and commissioning of four plasma tools (etchers and deposition system)
- Tools to handle 100 mm and 200 mm diameter wafers
Show full summary
Open tender by Education Procurement Service (EPS) for University College Cork (Tyndall National Institute) for supply, delivery, installation, and commissioning of a suite of plasma etching and deposition tools in 4 lots. The equipment will be used for semiconductor device fabrication, including silicon microelectronics, MEMS, photonics, and other materials. Estimated total value €3,300,000. Deadline for tenders: 2026-07-17 11:00 UTC. Submission via electronic means only, in English. Performance location: Ireland (IE052).
Risks
No award criteria, selection criteria, or required documents list provided. Bidders must rely on procurement documents...
Lot estimated values are each listed as €3,300,000 but overall estimated value is also €3,300,000, suggesting possible...
Submission deadline in 0 days
Analysis may be incomplete
Only part of the procurement documentation was analyzed. Additional eligibility requirements, certificates, or submission documents may exist in the remaining tender documentation.
Key Requirements
Technical
- Cutting-edge solutions for etching and deposition with precision, reliability, efficiency
- Ability to handle both 100 mm and 200 mm wafers
Administrative
- Tenderers may submit for one or more lots (up to 4 lots)
Requirements may be incomplete.
Buyer
Name
Education Procurement Service (EPS)
Location
Limerick, IRL
Buyer profile
Identifier
IE 6609370 G
Activity
Education
Lots (4)
LOT-0001
Plasma Etcher ,Silicon ,Dielectrics
Advanced plasma etching system for etching polysilicon, silicon dioxide, and silicon nitride thin films using medium high-density plasma processes.
EUR 3.3M
Estimated value
Location
Duration
Category
Deadline
Award details
Value note
Show original TED data
Original TED description
Tenders are sought for the supply delivery, installation and commissioning of a suite of tools in 4 Lots for silicon-based and dielectric materials for University College Cork. The new plasma tools will enhance the capabilities at the Tyndall National Institute for the fabrication of semiconductor devices, especially silicon microelectronics and silicon MEMS, but also other materials such as germanium and silicon carbide. We invite proposals for the following lots; Lot 1 Plasma Etcher Silicon Dielectrics, advanced plasma etching system capable of etching for polysilicon poly-Si silicon dioxide SiO2 silicon nitride SiN thin films using medium high-density plasma processes. Lot 2 Plasma Etcher Metals Piezoelectrics, advanced plasma etching system capable of etching for aluminium Al and alloys molybdenum Mo aluminium scandium nitride AlScN thin films using medium high-density plasma processes. Lot 3 Plasma Etcher Slow and Controllable Rate Atomic Layer Etch for Silicon Dielectrics, advanced plasma etching system capable of both conventional high-rate etching and slow and controllable rate atomic layer etching for silicon Si silicon dioxide SiO2 silicon nitride SiN thin films using medium high-density plasma processes. Lot 4 Plasma Deposition PECVD, advanced plasma enhanced chemical vapour deposition system capable of depositing dielectric SiO2, SiN and amorphous a-Si thin films on semiconductor substrates. This equipment will be essential for etching and depositing a range of materials used in the fabrication of silicon microelectronics, silicon photonics and silicon MEMS devices. The ideal tools will offer precision, reliability, and efficiency to meet the requirements for etching and deposition on both 100 mm and 200 mm diameter wafers. Tenderers with cutting-edge solutions that can achieve these high standards are encouraged to submit their proposals for this vital component in our technological advancement.
LOT-0002
Plasma Etcher ,Metals ,Piezoelectrics
Advanced plasma etching system for etching aluminium, molybdenum, and aluminium scandium nitride thin films using medium high-density plasma processes.
EUR 3.3M
Estimated value
Location
Duration
Category
Deadline
Award details
Value note
Show original TED data
Original TED description
Tenders are sought for the supply delivery, installation and commissioning of a suite of tools in 4 Lots for silicon-based and dielectric materials for University College Cork. The new plasma tools will enhance the capabilities at the Tyndall National Institute for the fabrication of semiconductor devices, especially silicon microelectronics and silicon MEMS, but also other materials such as germanium and silicon carbide. We invite proposals for the following lots; Lot 1 Plasma Etcher Silicon Dielectrics, advanced plasma etching system capable of etching for polysilicon poly-Si silicon dioxide SiO2 silicon nitride SiN thin films using medium high-density plasma processes. Lot 2 Plasma Etcher Metals Piezoelectrics, advanced plasma etching system capable of etching for aluminium Al and alloys molybdenum Mo aluminium scandium nitride AlScN thin films using medium high-density plasma processes. Lot 3 Plasma Etcher Slow and Controllable Rate Atomic Layer Etch for Silicon Dielectrics, advanced plasma etching system capable of both conventional high-rate etching and slow and controllable rate atomic layer etching for silicon Si silicon dioxide SiO2 silicon nitride SiN thin films using medium high-density plasma processes. Lot 4 Plasma Deposition PECVD, advanced plasma enhanced chemical vapour deposition system capable of depositing dielectric SiO2, SiN and amorphous a-Si thin films on semiconductor substrates. This equipment will be essential for etching and depositing a range of materials used in the fabrication of silicon microelectronics, silicon photonics and silicon MEMS devices. The ideal tools will offer precision, reliability, and efficiency to meet the requirements for etching and deposition on both 100 mm and 200 mm diameter wafers. Tenderers with cutting-edge solutions that can achieve these high standards are encouraged to submit their proposals for this vital component in our technological advancement.
LOT-0003
Plasma Etcher ,Slow and Controllable Rate ,Atomic Layer Etch for Silicon , Dielectrics
Advanced plasma etching system capable of both conventional high-rate etching and slow, controllable atomic layer etching for silicon, silicon dioxide, and silicon nitride thin films.
EUR 3.3M
Estimated value
Location
Duration
Category
Deadline
Award details
Value note
Show original TED data
Original TED description
Tenders are sought for the supply delivery, installation and commissioning of a suite of tools in 4 Lots for silicon-based and dielectric materials for University College Cork. The new plasma tools will enhance the capabilities at the Tyndall National Institute for the fabrication of semiconductor devices, especially silicon microelectronics and silicon MEMS, but also other materials such as germanium and silicon carbide. We invite proposals for the following lots; Lot 1 Plasma Etcher Silicon Dielectrics, advanced plasma etching system capable of etching for polysilicon poly-Si silicon dioxide SiO2 silicon nitride SiN thin films using medium high-density plasma processes. Lot 2 Plasma Etcher Metals Piezoelectrics, advanced plasma etching system capable of etching for aluminium Al and alloys molybdenum Mo aluminium scandium nitride AlScN thin films using medium high-density plasma processes. Lot 3 Plasma Etcher Slow and Controllable Rate Atomic Layer Etch for Silicon Dielectrics, advanced plasma etching system capable of both conventional high-rate etching and slow and controllable rate atomic layer etching for silicon Si silicon dioxide SiO2 silicon nitride SiN thin films using medium high-density plasma processes. Lot 4 Plasma Deposition PECVD, advanced plasma enhanced chemical vapour deposition system capable of depositing dielectric SiO2, SiN and amorphous a-Si thin films on semiconductor substrates. This equipment will be essential for etching and depositing a range of materials used in the fabrication of silicon microelectronics, silicon photonics and silicon MEMS devices. The ideal tools will offer precision, reliability, and efficiency to meet the requirements for etching and deposition on both 100 mm and 200 mm diameter wafers. Tenderers with cutting-edge solutions that can achieve these high standards are encouraged to submit their proposals for this vital component in our technological advancement.
LOT-0004
Plasma Deposition ,PECVD
Tenders are sought for the supply delivery, installation and commissioning of a suite of tools in 4 Lots for silicon-based and dielectric materials for University College Cork. The new plasma tools will enhance the capabilities at the Tyndall National Institute for the fabrication of semiconductor devices, especially silicon microelectronics and silicon MEMS, but also other materials such as germanium and silicon carbide. We invite proposals for the following lots; Lot 1 Plasma Etcher Silicon Dielectrics, advanced plasma etching system capable of etching for polysilicon poly-Si silicon dioxide SiO2 silicon nitride SiN thin films using medium high-density plasma processes. Lot 2 Plasma Etcher Metals Piezoelectrics, advanced plasma etching system capable of etching for aluminium Al and alloys molybdenum Mo aluminium scandium nitride AlScN thin films using medium high-density plasma processes. Lot 3 Plasma Etcher Slow and Controllable Rate Atomic Layer Etch for Silicon Dielectrics, advanced plasma etching system capable of both conventional high-rate etching and slow and controllable rate atomic layer etching for silicon Si silicon dioxide SiO2 silicon nitride SiN thin films using medium high-density plasma processes. Lot 4 Plasma Deposition PECVD, advanced plasma enhanced chemical vapour deposition system capable of depositing dielectric SiO2, SiN and amorphous a-Si thin films on semiconductor substrates. This equipment will be essential for etching and depositing a range of materials used in the fabrication of silicon microelectronics, silicon photonics and silicon MEMS devices. The ideal tools will offer precision, reliability, and efficiency to meet the requirements for etching and deposition on both 100 mm and 200 mm diameter wafers. Tenderers with cutting-edge solutions that can achieve these high standards are encouraged to submit their proposals for this vital component in our technological advancement.
EUR 3.3M
Estimated value
Location
Duration
Category
Award details
Procurement Details
- Publication date
- 16 Jun 2026
- Notice type
- Contract notice — standard
- Languages
- English
Reference metadata
- Notice subtype
- 16
- Notice version
- 1
- Legal basis
- 32014L0024
Reference IDs
- Tender ID
- 415187-2026
Documents (2)
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Opportunity Score
Why this score?
Opportunity
65 / 100
Complexity
70 / 100
Risk factors
No award criteria, selection criteria, or required documents list provided. Bidders must rely on procurement documents...
Lot estimated values are each listed as €3,300,000 but overall estimated value is also €3,300,000, suggesting possible...
Submission deadline in 0 days
Deep Portfolio Analysis
Uses:
- Description
- Industries & Services
- Capabilities
- Market & Experience
- Certifications